Qualcomm Snapdragon 835 Launched, Based On 10nm Process
Qualcomm today announced its latest flagship SoC, the Snapdragon 835. Taking over from the successful Snapdragon 820/821, the Snapdragon 835 SoC is built on the 10nm FinFet process. The latest SoC from Qualcomm also comes with massive battery and efficiency gains.
Qualcomm Snapdragon 835 Details
The Snapdragon 835 SoC is built on a more efficient 10 nanometer FinFet process. Comparatively, its predecessor, the Snapdragon 821 was built on a 14 nanometer process. Put in simpler terms, this means that the Snapdragon 835 is 30% more efficient than the Snapdragon 821 in terms of space requirements. This helps the new SoC improve its performance by nearly 27% and consume 40% less power.
Coming to other details, the Snapdragon 835 SoC will also be compliant with Android 7.0 Nougat’s USB Type C spec. So far, Qualcomm’s Quick Charge feature and USB Type C were not compatible due to the USB Type C specs. Qualcomm has rectified this in the new SoC – it will come with Quick Charge 4.0, which is 20% faster than Quick Charge 3.0. Quick Charge 4.0 can charge up to 50% of the battery capacity in just 15 minutes. With a 5 minute charge, you can get a battery boost that should last for up to 5 hours.
Qualcomm has also revealed that it will be collaborating with Samsung for the manufacture of Snapdragon 835. The two companies have entered into a partnership to leverage Samsung’s gains in the foundry business. The first device to feature the new Snapdragon 835 SoC will be the Samsung Galaxy S8, if the recent rumours and reports are to be believed.
